01-05-2021



Drops right in, drain for plate, gate for grid, source for cathode. An IRF 820 has both enough voltage rating and more than enough current and power ratings to do the job. And the IRF820 is about $2.00 each, doesn't need heater current, and won't wear out like a tube will. Type: n-channel Drain-to-Source Breakdown Voltage: 500 V Gate-to-Source Voltage, max: ±20 V; Drain-Source On-State Resistance, max: 3 mΩ Continuous Drain Current: 2.5 A Total Gate Charge: 24 nC Power Dissipation: 50 W Package: TO-220AB.

IRF820
MOSFET N-CH 500V 4A TO-220
STMicroelectronics
PowerMESH™r
1.IRF820.pdf (12 pages)
MOSFET N-Channel, Metal Oxide
Standard
3 Ohm @ 1.5A, 10V
500V
4A
N-mosfet irf 820820
4V @ 250µA
17nC @ 10V
315pF @ 25V
80W
Through Hole
TO-220-3 (Straight Leads)
Contains lead / RoHS non-compliant
497-2733-5

Available stocks

Part Number
Quantity
IRF820
FAIRCHILD
5 000
IRF820
ST
IRF820 FAIRCHILD
FAIRCHILD

Irf820 Mosfet

5 000
IRF820,5009,TO-220,VBSEMI
IRF820.
ST
IRF820A
IR
3 000
IRF820A
IR
12 500
IRF820A
ST
IRF820A,5000,TO-220,VBSEMI
IRF820AL
IR
12 500
IRF820APBF,5000,TO-220AB,VBSEMI
IRF820AS,1000,TO-263,VBSEMI
IRF820ASTRL,5000,D2PAK,VBSEMI
IRF820FI
ST
IRF820PBF
VISHAY
180
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General features

Irf830 Mosfet

The PowerMESH™II is the evolution of the first
refinements introduced greatly improve the
at the leading edge for what concerns switching
Applications

Irf820 Mosfet Datasheet Pdf

June 2006
100% avalnche tested
Gate charge minimized
IRF820
Part number
V
DSS

Irf 820 Mosfet Data Sheet

<0.3Ω
Marking
4A
D
Rev 3
Package
PowerMesh™II MOSFET
1
3
Tube
www.st.com
12
N-mosfet irf 820

IRF820 Summary of contents

Page 1

... Applications ■ Switching application Order codes Part number IRF820 June 2006 N-channel 500V - 2.5Ω TO-220 R I DS(on) D <0.3Ω 4A Internal schematic diagram Marking IRF820 Rev 3 IRF820 PowerMesh™II MOSFET TO-220 Package Packaging TO-220 Tube 1/12 www.st.com 12 ...

Page 2
Irf820

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 IRF820 ...

Page 3

... IRF820 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Drain-gate voltage (R DGR V Gate- source voltage GS I Drain current (continuos Drain current (continuos (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) dv/dt Peak diode recovery voltage slope T Storage temperature ...

Page 4

... ±30V 10V Parameter Test Conditions V > D(on 25V MHz 300 4.7Ω 400V 10V GS Min. Typ. Max 500 GS 50 ±100 = 250µ 1.5 A 2.5 Min. Typ. Max. DS(on)max, 3 315 2.7 6.1 IRF820 Unit V 1 µA µ Ω 3 Unit ...

Page 5

... IRF820 Table 6. Source drain diode Symbol Source-drain Current I SD Source-drain Current (1) I SDM (pulsed) (2) V Forward On Voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characterisics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance IRF820 ...

Page 7

... IRF820 Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature 7/12 ...

Page 8

... Test circuit 3 Test circuit Figure 12. Unclamped Inductive load test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times 8/12 Figure 13. Unclamped inductive waveform Figure 15. Gate charge test circuit IRF820 ...

Page 9

... IRF820 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... IRF820 inch MIN. TYP. MAX. 0.173 0.181 0.024 0.034 0.045 0.066 0.019 0.027 0.60 0.620 0.393 0.409 0.094 0.106 0.194 0.202 0.048 0.052 ...

Page 11

... IRF820 5 Revision history Table 7. Revision history Date 21-Jun-2004 27-Jun-2006 Revision 2 Preliminary version 3 New template, no content change Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com IRF820 ...

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